 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Power Transistors 2SB928, 2SB928A Silicon PNP epitaxial planar type For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 10.00.3 1.50.1 10.5min. q q q High collector to emitter VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings -200 -150 -180 -6 -3 -2 30 1.3 150 -55 to +150 Unit V 2.0 s Features 1.5max. 1.1max. 0.80.1 0.5max. 2.540.3 5.080.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB928 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 6.00.3 1.5-0.4 Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 2.0 3.0-0.2 A A 4.40.5 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.080.5 W C C 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB928 2SB928A (TC=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = -200V, IE = 0 VEB = -4V, IC = 0 IC = -500A, IE = 0 IC = -5mA, IB = 0 IE = -500A, IC = 0 VCE = -10V, IC = -150mA VCE = -10V, IC = -400mA VCE = -10V, IC = -400mA IC = -500mA, IB = -50mA VCE = -10V, IC = - 0.5A, f = 10MHz min typ max -50 -50 4.40.5 Unit A A V V V -200 -150 -180 -6 60 50 -1 -1 30 240 Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency *h FE1 V V MHz Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification. 14.70.5 emitter voltage 2SB928A 10.00.3 V +0.4 +0 1 Power Transistors PC -- Ta 40 -600 TC=25C (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) 2SB928, 2SB928A IC -- VCE -2.0 VCE=-10V IC -- VBE Collector power dissipation PC (W) -500 IB=-4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -1.5mA -1.0mA - 0.5mA Collector current IC (A) 30 Collector current IC (A) (1) -1.6 25C -1.2 TC=100C -400 20 -300 - 0.8 -25C -200 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 -100 - 0.4 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10000 -10 IC/IB=10 hFE -- IC 10000 VCE=-10V 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Forward current transfer ratio hFE -3 1000 300 100 -25C 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 TC=100C 25C -1 TC=100C 25C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 Transition frequency fT (MHz) -1 -3 -10 3000 - 0.1 - 0.3 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) -10 ICP IC -1 5ms 103 Non repetitive pulse TC=25C t=0.5ms 1ms Rth(t) -- t (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10 -3 Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 - 0.3 300ms 1 - 0.1 2SB928 - 0.03 2SB928A 10-1 - 0.01 -1 -3 -10 -30 -100 -300 -1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
Price & Availability of 2SB928
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |